Micron announced that LPDDR5X memory has been mass-produced and shipped after being included in the main architectural design of the Qualcomm Snapdragon 8 Gen 2 chip. Micron uses a new generation of process technology on low-power LPDDR5X mobile memory, with a maximum rate of 8.5Gb per second. In addition to mobile applications, DRAM products based on the 1β node also feature low latency, low power consumption, and high performance.
Compared with the previous generation of 1α nodes, 1β technology can increase energy efficiency by about 15%, increase memory density by more than 35%, and have a single die capacity of 16Gb. Previously, Micron shipped products based on the 1α (1-alpha) node in volume in 2021.
The latest LPDDR5X is designed for high-end and flagship smartphones. Taiwan media pointed out that Raj Talluri, Micron's senior vice president and general manager of the mobile business unit, said that Micron's fastest LPPDR5X has been mass-produced and distributed globally.
Ziad Asghar, vice president of product management at Qualcomm, pointed out that high-speed memory is indispensable in order to achieve the light-speed Internet access, dynamic experience, and epoch-making performance claimed by Snapdragon 8 Gen 2. Micron's LPDDR5X memory can reach 8.5Gbps, with unprecedented ultra-high speed and energy consumption performance, which can meet the needs of Qualcomm chipsets.
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