Recently, National Star Optoelectronics Research Institute has launched NSiC-KS series products in the form of TO-247-4L, which can be used in mobile energy storage, photovoltaic inverters, new energy vehicle charging piles, etc.
With the rapid popularization of the Industry 4.0 era and new energy vehicles, industrial power supplies and high-voltage chargers have increasing requirements for performance such as switching loss and power density of power devices. High, low on-resistance, small turn-on loss, and other excellent features are seizing the new energy market.
The packaging technology of Nationstar Optoelectronics adopts TO-247-4L with auxiliary source pins as the packaging form of NSiC-KS series products through scientific and systematic design, and applies it to SiC MOSFET to obtain the switching loss of discrete devices. , new breakthroughs in drive design, etc.
Taking the third-generation semiconductor NSiC series 1200V 80mΩ SiC MOSFET products of National Star Optoelectronics as an example, the SiC MOSFET in NSiC-KS package avoids the sharing of source lines between the drive circuit and the power circuit, and realizes the decoupling of these two circuits. As a result, the switching loss and turn-on loss of the NSiC-KS packaged SiC MOSFET are significantly reduced, the switching frequency is faster, and the parasitic inductance and the risk of false turn-on are lower.
In order to meet the market demand, National Star Optoelectronics NSiC-KS SiC MOSFET products have a variety of models to choose from. At the same time, based on the company's complete SiC discrete device production line, National Star Optoelectronics can provide high-performance, high-reliability, and high-quality product technology solutions according to customer needs.
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