Tianyu Advanced Technology, a leading Chinese manufacturer of silicon carbide (SiC) substrates, has unveiled its latest 8-inch SiC substrate technology at the Semicon China exhibition. The company's CTO, Dr. Gao Chao, said that the new technology has been successfully developed and is ready for commercialization.
The new 8-inch SiC substrate is made using a liquid-phase growth method. This method is known for producing high-quality SiC crystals with low defects. Tianyu Advanced Technology has also made some innovations to the liquid-phase growth method, which have further improved the quality of the resulting crystals.
As a result of these innovations, the company's 8-inch SiC substrates have a defect density of less than 100 defects per square centimeter. This is significantly lower than the defect density of competing products, which typically have defect densities of several thousand defects per square centimeter.
The low defect density of Tianyu Advanced Technology's 8-inch SiC substrates makes them ideal for use in high-performance applications such as electric vehicles and power electronics. The company is already working with several major customers in these industries to bring its new products to market.
In addition to the 8-inch SiC substrate, Tianyu Advanced Technology also showcased its 6-inch SiC substrate technology at the Semicon China exhibition. The company's 6-inch SiC substrates are already in mass production and are being used by customers in a variety of industries.
Tianyu Advanced Technology is a major player in the global SiC substrate market. The company's new 8-inch SiC substrate technology is a significant advancement in the field and is expected to help the company further solidify its position in the market.
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