Samsung's HBM3E memory sample "Shinebolt" reaches 1.228TB/s bandwidth

Samsung has confirmed that its fifth-generation HBM3E product will be named "Shinebolt". Korean media claimed that Samsung has begun to provide this "Shinebolt" sample to customers for quality testing. The sample's specifications are 8-layer 24GB. In addition, Samsung will soon complete the development of 12-layer 36GB products

Shinebolt's maximum data transfer speed (bandwidth) is about 50% higher than HBM3, reaching 1.228TB/s . Although Samsung's HBM development and production speed lags behind SK Hynix to some extent, Samsung still plans to regain advanced memory production leading position.

The key to HBM lies in the connection method between each layer. Samsung has been using the thermal compression non-conductive film (TC-NCF) process from the beginning of HBM production, while SK Hynix uses mass reflow molding underfill (MR-MUF) ) process. Of course, which one is better between the two still needs to be judged by the market.

Already lagging behind SK Hynix in HBM development and production speed, Samsung has also begun to re-formulate strategies to regain its market position. Samsung is currently considering accelerating the development of HBM's "hybrid connection" process to "change the rules of the game."

We discovered that Lee Jung-bae, president of Samsung's memory business, had previously said: "We are currently producing HBM3 and have successfully developed the next-generation product HBM3E. We will further expand the production of HBM to meet customer needs."

This news is significant because it shows that Samsung is still committed to developing HBM memory, despite some challenges. HBM memory is a type of high-bandwidth memory that is used in a variety of applications, including artificial intelligence, machine learning, and high-performance computing. Samsung's development of HBM3E memory is a sign that the company is still looking to be a leader in this market.

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